IXFN34N80【PDF 1/4 页】MOSFET N-CH 800V 34A SOT-227B

您好，
买卖IC网欢迎您。
请登录
免费注册

[1页]2页 3页 4页

I D25

HiPerFET TM Power MOSFETs

Single DieMOSFET

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low t rr

IXFN 34N80

D

V DSS = 800 V

= 34 A

R DS(on) = 0.24 W

t rr ￡ 250 ns

Preliminary data sheet

S

Symbol

Test Conditions

Maximum Ratings

miniBLOC, SOT-227 B

V DSS

V DGR

V GS

V GSM

T J = 25 ° C to 150 ° C

T J = 25 ° C to 150 ° C; R GS = 1 M W

Continuous

Transient

800

800

± 20

± 30

V

V

V

V

E153432

G

S

I D25

I DM

T C = 25 ° C

T C = 25 ° C, pulse width limited by T JM

34

136

A

A

D

S

I AR

E AR

E AS

T C = 25 ° C

T C = 25 ° C

34

64

3

A

mJ

J

G = Gate

S = Source

D = Drain

dv/dt

I S ￡ I DM , di/dt ￡ 100 A/ m s, V DD ￡ V DSS ,

5

V/ns

Either Source terminal of miniBLOC can be used

as Main or Kelvin Source

T J ￡ 150 ° C, R G = 2 W

P D

T J

T C = 25 ° C

600

-55 ... +150

W

° C

T JM

150

° C

Features

T stg

T L

1.6 mm (0.063 in) from case for 10 s

-55 ... +150

300

° C

° C

· International standard packages

· miniBLOC, with Aluminium nitride

V ISOL

50/60 Hz, RMS

I ISOL ￡ 1 mA

t = 1 min

t=1s

2500

3000

V~

V~

isolation

· Low R DS (on) HDMOS TM process

· Rugged polysilicon gate cell structure

M d

Mounting torque

Terminal connection torque

1.5/13 Nm/lb.in.

1.5/13 Nm/lb.in.

· Unclamped Inductive Switching (UIS)

rated

Weight

30

g

· Low package inductance

· Fast intrinsic Rectifier

Symbol

Test Conditions

Characteristic Values

(T J = 25 ° C, unless otherwise specified)

min. typ. max.

Applications

· DC-DC converters

· Battery chargers

V DSS

V GS = 0 V, I D = 3 mA

800

V

· Switched-mode and resonant-mode

V GS(th)

I GSS

I DSS

R DS(on)

V DSS temperature coefficient

V DS = V GS , I D = 8 mA

V GS(th) temperature coefficient

V GS = ± 20 V DC , V DS = 0

V DS = V DSS

V GS = 0 V

V GS = 10 V, I D = 0.5 ? I D25

Pulse test, t ￡ 300 m s,

duty cycle d ￡ 2 %

T J = 25 ° C

T J = 125 ° C

3.0

0.096

-0.214

5.0

± 200

100

2

0.24

%/K

V

%/K

nA

m A

mA

W

power supplies

· DC choppers

· Temperature and lighting controls

Advantages

· Easy to mount

· Space savings

· High power density

IXYS reserves the right to change limits, test conditions, and dimensions.

? 2000 IXYS All rights reserved

98529D (6/99)

1-4

发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

*型号	*数量	厂商	批号	封装

添加更多采购

我的联系方式

*

*

*

相关PDF资料

IXFN360N10T MOSFET N-CH 100V 360A SOT-227B

IXFN360N15T2 MOSFET N-CH 150V 310A SOT227

IXFN36N100 MOSFET N-CH 1KV 36A SOT-227B

IXFN36N110P MOSFET N-CH 1100V 36A SOT-227B

IXFN38N100P MOSFET N-CH 1000V 38A SOT-227B

IXFN40N110P MOSFET N-CH 1100V 34A SOT-227B

IXFN40N90P MOSFET N-CH 900V 33A SOT227

IXFN420N10T MOSFET N-CH 100V 420A SOT-227

相关代理商/技术参数

IXFN35N50 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HIPERFET Power MOSFTETs

IXFN360N10T 功能描述:MOSFET 360 Amps 100V RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube

IXFN360N15T2 功能描述:功率驱动器IC GigaMOS Trench T2 HiperFET PWR MOSFET RoHS:否制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube

IXFN36N100 功能描述:MOSFET 1KV 36A RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube

IXFN36N110P 功能描述:MOSFET 36 Amps 1100V 0.2400 Rds RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube

IXFN36N60 功能描述:MOSFET 600V 36A RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube

IXFN38N100P 功能描述:MOSFET 38 Amps 1000V RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube

IXFN38N100Q2 功能描述:MOSFET 38 Amps 1000V 0.25 Rds RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube